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Toshiba Develops SRAM Circuit Technique that Secures Low Voltage Operation of System LSI.

Toshiba Corporation today announced that it has developed a breakthrough technology that achieves low voltage operation of System LSI, opening the way to reduced power consumption in digital products. The technology secures successful operation of static random access memories (SRAM) at low voltage with an improved circuit design that optimizes voltage control of the bit line and word line.


Toshiba eliminated the need for circuit adjustment by developing a scheme to determine the operation timing of the negative voltage generation circuit (2) based on the length of the Bit Line Replica (1). This supports simplified, software-based generation of SRAM design data according to memory capacity and the cell array configuration.

-- Tom