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Silicon oxide circuits break barrier: Nanocrystal conductors could lead to massive, robust 3-D storage

Rice University scientists have created the first two-terminal memory chips that use only silicon, one of the most common substances on the planet, in a way that should be easily adaptable to nanoelectronic manufacturing techniques and promises to extend the limits of miniaturization subject to Moore's Law.


A 1k silicon oxide memory has been assembled by Rice and a commercial partner as a proof-of-concept. Silicon nanowire forms when charge is pumped through the silicon oxide, creating a two-terminal resistive switch. (Images courtesy Jun Yao/Rice University)

-- Tom