- Sep 12, 2003
Keeping Moore's law going to 7 nanometers.
Future transistors: Eliminating EXCESS: In the next few years, traditional planar CMOS field-effect transistorswill be replaced by alternate architectures that boost the gate's control of the channel. The UTB SOIreplaces the bulk silicon channel with a thin layer of silicon mounted on insulator. The FinFETturns the transistor channel on its side and wraps the gate around three sides. Illustration: Emily Cooper